IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 Comparación
Comparación detallada lado a lado de IPB60R040CFD7ATMA1 por Infineon y IPB60R125C6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB60R040CFD7ATMA1 | IPB60R125C6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,19 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Disipación de potencia (TC=25°C) | 227 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Nivel MSL | 1 | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS™ C6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 30 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 125 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: Qg typical value] |
| Power Dissipation (PD) at TC=25°C | — | 219 W |
| Temperatura de unión de funcionamiento | — | -55°C to +150°C |
| Encapsulado / Carcasa | — | PG-TO263-3 (D2PAK, surface mount) |
| Supplier Device Package | — | PG-TO263-3 |
| Lead-Free Status | — | Yes |