IPB60R040CFD7ATMA1 vs IPB60R125C6ATMA1 Comparison

Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPB60R125C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R040CFD7ATMA1 IPB60R125C6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (TC=25°C) 227 W —
Operating Temperature Range -55°C to +150°C —
Package PG-TO263-3-2 (D2PAK) —
Mounting Type Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL Level 1 —
RoHS Status Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS™ C6
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 30 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 125 mΩ
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Gate Charge (Qg, typical) — [DATA_NEEDED: Qg typical value]
Power Dissipation (PD) at TC=25°C — 219 W
Operating Junction Temperature — -55°C to +150°C
Package / Case — PG-TO263-3 (D2PAK, surface mount)
Supplier Device Package — PG-TO263-3
Lead-Free Status — Yes

Datasheets & Resources

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