IPB60R040CFD7ATMA1 vs IPD60R600PFD7SAUMA1 Vergleich
Detaillierter Direktvergleich von IPB60R040CFD7ATMA1 von Infineon und IPD60R600PFD7SAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktivInfineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB60R040CFD7ATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,19 | $0,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Verlustleistung (TC=25°C) | 227 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS PFD7 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| Betriebstemperatur | — | -55°C to +150°C (Tj) |
| Reel Quantity | — | 2500 |