IPB60R040CFD7ATMA1 vs IPD60R600PFD7SAUMA1 对比

详细并排对比 IPB60R040CFD7ATMA1 出自 Infineon 和 IPD60R600PFD7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中
Infineon
IPD60R600PFD7SAUMA1 IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon

IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon

IPD60R600PFD7SAUMA1 ✓ 量产中

规格对比

参数 IPB60R040CFD7ATMA1 IPD60R600PFD7SAUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.19 $0.45
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOS)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功耗(TC=25°C) 227 W —
工作温度范围 -55°C to +150°C —
封装 PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK)
安装类型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS PFD7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D) — 6 A (Tc)
R_DS(on) Max — 600 mΩ @ V_GS = 10 V, I_D = 1.7 A
Total Gate Charge (Q_g) — 8.5 nC
Output Capacitance (C_oss) — 8 pF @ 400 V
Power Dissipation (P_D) — 31 W (Tc)
Gate Threshold Voltage (V_GS(th)) — 3.5 V (typ)
工作温度 — -55°C to +150°C (Tj)
Reel Quantity — 2500

数据手册与资源

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