IPB60R125C6ATMA1 vs IPB60R040CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R125C6ATMA1 von Infineon und IPB60R040CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB60R125C6ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ C6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 30 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 125 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: Qg typical value] | — |
| Power Dissipation (PD) at TC=25°C | 219 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Gehäuse / Bauform | PG-TO263-3 (D2PAK, surface mount) | — |
| Montageart | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free Status | Yes | — |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Verlustleistung (TC=25°C) | — | 227 W |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Gehäuse | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL-Level | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |