IPB60R125C6ATMA1 vs IPB60R040CFD7ATMA1 비교
다음의 상세 나란히 비교: IPB60R125C6ATMA1 제조: Infineon 및 IPB60R040CFD7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB60R125C6ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ C6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 30 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 125 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: Qg typical value] | — |
| Power Dissipation (PD) at TC=25°C | 219 W | — |
| 동작 접합 온도 | -55°C to +150°C | — |
| 패키지 / 케이스 | PG-TO263-3 (D2PAK, surface mount) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free Status | Yes | — |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 전력 손실 (TC=25°C) | — | 227 W |
| 동작 온도 범위 | — | -55°C to +150°C |
| 패키지 | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL 레벨 | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |