IPB60R125C6ATMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPB60R125C6ATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R125C6ATMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status — In Stock
Unit Price (USD) — $5.19
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ C6 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25°C 30 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) max at VGS=10V 125 mΩ —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Gate Charge (Qg, typical) [DATA_NEEDED: Qg typical value] —
Power Dissipation (PD) at TC=25°C 219 W —
Operating Junction Temperature -55°C to +150°C —
Package / Case PG-TO263-3 (D2PAK, surface mount) —
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 —
RoHS Status Compliant Compliant
Lead-Free Status Yes —
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (TC=25°C) — 227 W
Operating Temperature Range — -55°C to +150°C
Package — PG-TO263-3-2 (D2PAK)
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
MSL Level — 1
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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