IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 Vergleich
Detaillierter Direktvergleich von IPC70N04S5L4R2ATMA1 von Infineon und IPB100N04S4H2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC70N04S5L4R2ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,42 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | OptiMOS-T2 (trench gate) |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Gehäuse | PG-TDSON-8-34 (Surface Mount) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260°C peak reflow) | MSL1 (up to 260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | — |
| RoHS-Status | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| RoHS Compliance | — | Compliant (Green Product) |