IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 对比

详细并排对比 IPC70N04S5L4R2ATMA1 出自 Infineon 和 IPB100N04S4H2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 量产中

规格对比

参数 IPC70N04S5L4R2ATMA1 IPB100N04S4H2ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.42
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS-T2 (trench gate)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封装 PG-TDSON-8-34 (Surface Mount) PG-TO263-3-2 (D2PAK-2) Surface Mount
Operating Temperature (Tj) -55°C to +175°C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260°C peak reflow) MSL1 (up to 260C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% (60 A production test) —
RoHS 状态 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
工作结温 — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
Avalanche Energy (EAS) — 100% avalanche tested
RoHS Compliance — Compliant (Green Product)

数据手册与资源

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