IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 Comparaison
Comparaison détaillée côte à côte de IPC70N04S5L4R2ATMA1 par Infineon et IPB100N04S4H2ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPC70N04S5L4R2ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $1,42 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | OptiMOS-T2 (trench gate) |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Boîtier | PG-TDSON-8-34 (Surface Mount) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (up to 260°C peak reflow) | MSL1 (up to 260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | — |
| Statut RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| RoHS Compliance | — | Compliant (Green Product) |