IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 Comparação
Comparação detalhada lado a lado de IPC70N04S5L4R2ATMA1 por Infineon e IPB100N04S4H2ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPC70N04S5L4R2ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,78 | $1,42 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | OptiMOS-T2 (trench gate) |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Encapsulamento | PG-TDSON-8-34 (Surface Mount) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (up to 260°C peak reflow) | MSL1 (up to 260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | — |
| Status RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Temperatura de junção de operação | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| RoHS Compliance | — | Compliant (Green Product) |