IPD031N06L3GATMA1 vs IPD034N06N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD031N06L3GATMA1 von Infineon und IPD034N06N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD031N06L3GATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,51 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| Betriebstemperaturbereich | -55°C to +175°C | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | OptiMOS 3 |
| MSL-Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant (Pb-free green finish) |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |