IPD034N06N3GATMA1 vs IRL40S212ARMA1 Vergleich
Detaillierter Direktvergleich von IPD034N06N3GATMA1 von Infineon und IRL40S212ARMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD034N06N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $2,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Power Dissipation (Ptot) | 167 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | [DATA_NEEDED: VGS max] |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: Tj max] |
| RoHS-Status | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Part Family | — | StrongIRFET™ |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (PD, Tc) | — | 231 W |
| Lead-Free | — | Yes |