IPD034N06N3GATMA1 vs IRL40S212ARMA1 Comparación
Comparación detallada lado a lado de IPD034N06N3GATMA1 por Infineon y IRL40S212ARMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD034N06N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $2,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Power Dissipation (Ptot) | 167 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | [DATA_NEEDED: VGS max] |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: Tj max] |
| Estado RoHS | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Part Family | — | StrongIRFET™ |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (PD, Tc) | — | 231 W |
| Lead-Free | — | Yes |