IPD046N08N5ATMA1 vs IAUC60N06S5L073ATMA1 Vergleich
Detaillierter Direktvergleich von IPD046N08N5ATMA1 von Infineon und IAUC60N06S5L073ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD046N08N5ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse / Bauform | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench (OptiMOS 5) |
| RoHS-Status | ROHS3 Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | Single N-Channel |
| Series | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Gehäuse | — | PG-TDSON-8-33 (5x6 mm) |
| Betriebstemperaturbereich | — | -55C to +175C |
| Anzahl der Pins | — | 8 |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |