IPD052N10NF2SATMA1 vs IPD50N06S409ATMA2 Vergleich
Detaillierter Direktvergleich von IPD052N10NF2SATMA1 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD052N10NF2SATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD052N10NF2SATMA1 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Ta | 17 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | 50 A |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A | — |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA | — |
| Gehäuse / Bauform | PG-TO252-3 (DPAK, SC-63) | — |
| Supplier Device Package | PG-TO252-3 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 °C to +175 °C (TJ) | — |
| RoHS-Status | Compliant | Compliant |
| Number of Channels | 1 | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Gehäuse | — | PG-TO252-3-11 (DPAK) |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |