IPD052N10NF2SATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD052N10NF2SATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΞ© 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΞ© 118A | Infineon

IPD052N10NF2SATMA1 βœ“ Active

Specification Comparison

Parameter IPD052N10NF2SATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.49
Manufacturer Infineon Technologies β€”
Part Number IPD052N10NF2SATMA1 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide), OptiMOS 5 100V N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Ta 17 A β€”
Continuous Drain Current (ID) at Tc 118 A 50 A
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 150 W β€”
Drain-Source On-Resistance (RDS(on)) Max 5.2 mΞ© @ VGS=10V, ID=70A β€”
Gate-Source Threshold Voltage (VGS(th)) Max 3.8 V @ ID=84Β΅A β€”
Package / Case PG-TO252-3 (DPAK, SC-63) β€”
Supplier Device Package PG-TO252-3 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 Β°C to +175 Β°C (TJ) β€”
RoHS Status Compliant Compliant
Number of Channels 1 β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Package β€” PG-TO252-3-11 (DPAK)
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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