IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 Vergleich
Detaillierter Direktvergleich von IPD30N08S2L21ATMA1 von Infineon und IPD35N10S3L26ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD30N08S2L21ATMA1 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Maximum Junction Temperature | +175C | — |
| Gehäuse | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Drain tab + Gate + Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | MSL1 (up to 260°C peak reflow) |
| Part Number | — | IPD35N10S3L26ATMA1 |
| Technology | — | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| Avalanche Tested | — | 100% avalanche tested |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |