IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 对比
详细并排对比 IPD30N08S2L21ATMA1 出自 Infineon 和 IPD35N10S3L26ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD30N08S2L21ATMA1 | IPD35N10S3L26ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| 工作温度范围 | -55C to +175C | — |
| Maximum Junction Temperature | +175C | — |
| 封装 | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Drain tab + Gate + Source) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | MSL1 (up to 260°C peak reflow) |
| Part Number | — | IPD35N10S3L26ATMA1 |
| Technology | — | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Continuous Drain Current (ID) at TC=25°C | — | 35 A |
| On-Resistance RDS(on) max at VGS=10 V | — | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | — | 71 W |
| 工作结温 | — | -55°C to +175°C |
| Avalanche Tested | — | 100% avalanche tested |
| RoHS / Halogen-Free | — | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg from datasheet] |