IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 Comparison

Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and IPD35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD30N08S2L21ATMA1 IPD35N10S3L26ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Operating Temperature Range -55C to +175C —
Maximum Junction Temperature +175C —
Package PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Status Compliant —
MSL Level 1 MSL1 (up to 260°C peak reflow)
Part Number — IPD35N10S3L26ATMA1
Technology — OptiMOS-T (N-channel enhancement mode trench MOSFET)
Continuous Drain Current (ID) at TC=25°C — 35 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
Operating Junction Temperature — -55°C to +175°C
Avalanche Tested — 100% avalanche tested
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

Datasheets & Resources

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