IPD33CN10NGATMA1 vs IPG20N06S4L14AATMA1 Vergleich
Detaillierter Direktvergleich von IPD33CN10NGATMA1 von Infineon und IPG20N06S4L14AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD33CN10NGATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,82 |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | OptiMOS™ Trench |
| Gehäuse | PG-TO252-3 (DPAK), Surface Mount | PG-TDSON-8-10 (Wettable Flank) |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (TJ) | -55°C to +175°C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N06S4L14AATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| AOI Compatible | — | Yes (Wettable Flank) |