IPD33CN10NGATMA1 vs IPG20N06S4L14AATMA1 比較
詳細な並列比較: IPD33CN10NGATMA1 メーカー: Infineon および IPG20N06S4L14AATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD33CN10NGATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.32 | $0.82 |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | OptiMOS™ Trench |
| パッケージ | PG-TO252-3 (DPAK), Surface Mount | PG-TDSON-8-10 (Wettable Flank) |
| ピン数 | 3 (Gate, Drain, Source) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (TJ) | -55°C to +175°C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes | — |
| MSLレベル | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N06S4L14AATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| AOI Compatible | — | Yes (Wettable Flank) |