IPD50N03S4L06ATMA1 vs IPD90N04S403ATMA1 Vergleich
Detaillierter Direktvergleich von IPD50N03S4L06ATMA1 von Infineon und IPD90N04S403ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD50N03S4L06ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $1,05 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (V_DS) | 30 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 50 A | 90 A |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55C to +175C |
| Gehäuse | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-313 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260 C peak reflow) | MSL1 (peak reflow up to 260C) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS-Status | Compliant (Green Package) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS Compliance | — | Compliant (Green Package) |
| Technology | — | Trench MOSFET (OptiMOS-T2) |