IPD50N03S4L06ATMA1 vs IPD90N04S403ATMA1 对比
详细并排对比 IPD50N03S4L06ATMA1 出自 Infineon 和 IPD90N04S403ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD50N03S4L06ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $1.05 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (V_DS) | 30 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 50 A | 90 A |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| 工作结温 | -55 C to +175 C | -55C to +175C |
| 封装 | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-313 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (up to 260 C peak reflow) | MSL1 (peak reflow up to 260C) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS 状态 | Compliant (Green Package) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS Compliance | — | Compliant (Green Package) |
| Technology | — | Trench MOSFET (OptiMOS-T2) |