IPD50P04P413ATMA2 vs IPB120P04P4L03ATMA2 Vergleich
Detaillierter Direktvergleich von IPD50P04P413ATMA2 von Infineon und IPB120P04P4L03ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPD50P04P413ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $1,74 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typ/range] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |