IPD50P04P413ATMA2 vs IPB120P04P4L03ATMA2 Comparación
Comparación detallada lado a lado de IPD50P04P413ATMA2 por Infineon y IPB120P04P4L03ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | IPD50P04P413ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $1,74 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typ/range] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |
| Recuento de pines | — | 3 (Gate, Drain, Source) |