IPD50P04P413ATMA2 vs IPB120P04P4L03ATMA2 Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPB120P04P4L03ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 β ActiveSpecification Comparison
| Parameter | IPD50P04P413ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $1.74 |
| Polarity / Device Type | P-Channel MOSFET | β |
| Technology | OptiMOS-P2 (Trench) | β |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (TC=25Β°C, ID) | 50 A | β |
| Continuous Drain Current (TC=100Β°C, ID) | [DATA_NEEDED: ID @ 100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| Power Dissipation (TC=25Β°C, Ptot) | 58 W | β |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΞ© (typ) / 12.6 mΞ© (max) | β |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typ/range] |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max] |
| Maximum Junction Temperature (TJ,max) | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | β |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | β | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | β | 120 A |
| Power Dissipation (PD, Tc=25C) | β | 136 W |
| On-Resistance (RDS(on)) | β | 3.1 mΞ© (typ, per Infineon summary) |
| Operating Junction Temperature | β | -55C to +175C |
| Technology Family | β | OptiMOS-P2 |
| Configuration | β | Single P-Channel MOSFET |
| Pin Count | β | 3 (Gate, Drain, Source) |