IPD60N10S412ATMA1 vs IPD65R380E6ATMA1 Vergleich
Detaillierter Direktvergleich von IPD60N10S412ATMA1 von Infineon und IPD65R380E6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD60N10S412ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD60N10S412ATMA1 | — |
| Transistortyp | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TO252-3-313 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| RoHS-Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| Halogenfrei | Yes (per Infineon definition) | — |
| Series | — | CoolMOS™ E6 |
| Technology | — | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |