IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R145CFD7ATMA1 von Infineon und IPD082N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AktivInfineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD60R145CFD7ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $1,14 |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Gehäuse | TO-252AA (DPAK) surface mount | — |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Montageart | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK), surface mount |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |