IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPD082N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 β ActiveInfineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD60R145CFD7ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.14 |
| FET Type | N-Channel | β |
| Technology | CoolMOS CFD7 (superjunction) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | β |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | β |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | β |
| Package | TO-252AA (DPAK) surface mount | β |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | β |
| Operating Temperature | -55C to +150C (junction) | β |
| Mounting Type | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Series | CoolMOS CFD7 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | β |
| Part Number | β | IPD082N10N3GATMA1 |
| Manufacturer | β | Infineon Technologies |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) @ Tc=25Β°C | β | 80 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | β | 8.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 125 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Package / Case | β | PG-TO252-3 (DPAK), surface mount |
| Automotive Qualified (AEC-Q101) | β | Not applicable (industrial/consumer grade) |
| Lead-Free | β | Yes |