IPD60R145CFD7ATMA1 vs IPD082N10N3GATMA1 对比

详细并排对比 IPD60R145CFD7ATMA1 出自 Infineon 和 IPD082N10N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPD60R145CFD7ATMA1 IPD082N10N3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $1.14
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) OptiMOS 3 (Trench N-Channel)
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
封装 TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
工作温度 -55C to +150C (junction) —
安装类型 Surface Mount (DPAK, 3-pin + tab) Surface Mount
引脚数量 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Series CoolMOS CFD7 —
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Part Number — IPD082N10N3GATMA1
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tc=25°C — 80 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) @ Tc=25°C — 125 W
工作结温 — -55°C to +175°C
封装 / 外壳 — PG-TO252-3 (DPAK), surface mount
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

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