IPD60R180P7ATMA1 vs IAUC60N04S6L030HATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R180P7ATMA1 von Infineon und IAUC60N04S6L030HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD60R180P7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,81 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | -55 C to +175 C |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |