IPD60R180P7ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IPD60R180P7ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IPD60R180P7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-channel MOSFET | β |
| Drain-Source Voltage (VDS) | 600 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | β |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Power Dissipation (PD) at TC=25C | 72 W | β |
| Operating Junction Temperature | -55C to +150C | -55 C to +175 C |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Shipping Package | Tape and Reel (ATMA1 suffix) | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |