IPD60R180P7ATMA1 vs IAUC60N04S6L030HATMA1 对比
详细并排对比 IPD60R180P7ATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60R180P7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.81 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| 工作结温 | -55C to +150C | -55 C to +175 C |
| 封装 | PG-TO252-3 (DPAK) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |