IPD60R280P7SAUMA1 vs IPD60R380C6ATMA1 Vergleich

Detaillierter Direktvergleich von IPD60R280P7SAUMA1 von Infineon und IPD60R380C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD60R280P7SAUMA1 IPD60R380C6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $0,41
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: gate threshold voltage]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C -55C to +150C
Technology CoolMOS P7 Superjunction (SJ) N-channel CoolMOS C6 Superjunction
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level 1 [DATA_NEEDED: MSL level]
Series CoolMOS P7 (7th generation, 600 V) —
RoHS-Status Compliant Compliant
Integrated ESD Protection Yes —
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Storage Temperature — [DATA_NEEDED: storage temperature]
FET Type — N-Channel
Drain-Tab Connection — Exposed pad (electrically connected to drain)

Datenblätter & Ressourcen

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