IPD60R280P7SAUMA1 vs IPD60R380C6ATMA1 Сравнение
Подробное сравнение бок о бок IPD60R280P7SAUMA1 от Infineon и IPD60R380C6ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPD60R280P7SAUMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $0,41 |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: gate threshold voltage] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | -55C to +150C |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | CoolMOS C6 Superjunction |
| Корпус | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 | [DATA_NEEDED: MSL level] |
| Series | CoolMOS P7 (7th generation, 600 V) | — |
| Статус RoHS | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| FET Type | — | N-Channel |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |