IPD60R600PFD7SAUMA1 vs IAUCN10S5L280DATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R600PFD7SAUMA1 von Infineon und IAUCN10S5L280DATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktivInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD60R600PFD7SAUMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS) | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) | 6 A (Tc) | — |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A | — |
| Total Gate Charge (Q_g) | 8.5 nC | — |
| Output Capacitance (C_oss) | 8 pF @ 400 V | — |
| Power Dissipation (P_D) | 31 W (Tc) | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-TDSON-8-61 (SSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55°C to +150°C (Tj) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant |
| Reel Quantity | 2500 | — |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Betriebstemperaturbereich | — | -55C to +175C (junction) |
| Pin-Anzahl | — | 8 |
| Packing | — | Tape & Reel (T&R) |