IPD60R600PFD7SAUMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IPD60R600PFD7SAUMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter IPD60R600PFD7SAUMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 β€”
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOS) OptiMOS 5 Trench MOSFET
Drain-Source Voltage (V_DS) 600 V β€”
Continuous Drain Current (I_D) 6 A (Tc) β€”
R_DS(on) Max 600 mΞ© @ V_GS = 10 V, I_D = 1.7 A β€”
Total Gate Charge (Q_g) 8.5 nC β€”
Output Capacitance (C_oss) 8 pF @ 400 V β€”
Power Dissipation (P_D) 31 W (Tc) β€”
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) β€”
Package PG-TO252-3 (DPAK) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55Β°C to +150Β°C (Tj) β€”
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Reel Quantity 2500 β€”
Product Family β€” OptiMOS 5
Configuration β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Automotive Qualified β€” Yes (AEC-Q101, IAU prefix)
Operating Temperature Range β€” -55C to +175C (junction)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

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