IPD70N10S312ATMA1 vs IPD082N10N3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S312ATMA1 von Infineon und IPD082N10N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $1,14 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
| Product Family | OptiMOS-T Power-Transistor | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | [DATA_NEEDED: Qg typical] |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Technology | — | OptiMOS 3 (Trench N-Channel) |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK), surface mount |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| RoHS-Status | — | Compliant |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |