IPD70N10S312ATMA1 vs IPD082N10N3GATMA1 Comparação
Comparação detalhada lado a lado de IPD70N10S312ATMA1 por Infineon e IPD082N10N3GATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,92 | $1,14 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
| Product Family | OptiMOS-T Power-Transistor | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | [DATA_NEEDED: Qg typical] |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Encapsulamento | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (up to 260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Technology | — | OptiMOS 3 (Trench N-Channel) |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Temperatura de junção de operação | — | -55°C to +175°C |
| Encapsulamento / Caixa | — | PG-TO252-3 (DPAK), surface mount |
| Contagem de pinos | — | 3 (Gate, Drain, Source) |
| Status RoHS | — | Compliant |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |