IPG20N06S2L65AATMA1 vs IPG20N04S408ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N06S2L65AATMA1 von Infineon und IPG20N04S408ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N06S2L65AATMA1 | IPG20N04S408ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS (trench MOSFET) |
| Gehäuse | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-4 (SuperSO8 dual) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL-Level | MSL1 (peak reflow 260 C) | MSL1 (260 degC peak reflow) |
| RoHS-Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, per channel) | — | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | — | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | — | 65 W |
| Betriebs-Sperrschichttemperatur | — | -55 degC to +175 degC |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Rated | — | 100 percent tested |
| Channel Count | — | 2 (independent) |
| Operating Mode | — | Enhancement mode, Normal Level |