IPG20N06S2L65AATMA1 vs IPG20N06S2L65ATMA1 Vergleich
Detaillierter Direktvergleich von IPG20N06S2L65AATMA1 von Infineon und IPG20N06S2L65ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N06S2L65AATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,05 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | Dual N-Channel, Logic Level |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | 20 A per channel |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS-T2 (Planar Trench 55V) |
| Gehäuse | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-4 (TDSON-8 EP) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL-Level | MSL1 (peak reflow 260 C) | MSL1 (260°C peak reflow) |
| RoHS-Status | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |