IPG20N06S2L65AATMA1 vs IPG20N06S2L65ATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG20N06S2L65ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active
Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65AATMA1 IPG20N06S2L65ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.05
Manufacturer Infineon Technologies β€”
Series OptiMOS β€”
FET Type Dual N-Channel (Half Bridge / Independent) Dual N-Channel, Logic Level
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 20 A (per channel) 20 A per channel
Power Dissipation (PD) 43 W β€”
Gate Threshold (VGS(th)) Logic-Level β€”
Technology OptiMOS Trench MOSFET OptiMOS-T2 (Planar Trench 55V)
Package PG-TDSON-8-10 (TDSON-8 EP, wettable flank) PG-TDSON-8-4 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C β€”
AEC-Q101 Qualification Yes β€”
MSL Level MSL1 (peak reflow 260 C) MSL1 (260Β°C peak reflow)
RoHS Status Compliant (Green Product) β€”
Avalanche Tested 100% (per datasheet) β€”
AOI Compatible Yes (wettable flank) β€”
Drain-Source Voltage (VDS) β€” 55 V
RDS(on) at VGS=10V β€” 65 mΞ© typical
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic level)
Total Power Dissipation (Ptot) β€” 43 W
Operating Temperature Range β€” -55Β°C to +175Β°C
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Qualified
RoHS Compliance β€” RoHS Compliant (Green Product)
Packaging β€” Tape & Reel (TMA1 suffix)

Datasheets & Resources

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