IPG20N06S415ATMA2 vs IPD50N06S409ATMA2 Vergleich
Detaillierter Direktvergleich von IPG20N06S415ATMA2 von Infineon und IPD50N06S409ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPG20N06S415ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,49 |
| Technology | Dual N-channel enhancement-mode MOSFET | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| Total Power Dissipation (Ptot) | 50 W | — |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8-4 (Dual Super S08) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS-Status | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | — |
| Channel Type | N-Channel (Normal Level) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |