IPG20N06S415ATMA2 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPG20N06S415ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S415ATMA2

IPG20N06S415ATMA2 - Dual N-Ch 60V 20A MOSFET | Infineon

IPG20N06S415ATMA2 βœ“ Active

Specification Comparison

Parameter IPG20N06S415ATMA2 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.49
Technology Dual N-channel enhancement-mode MOSFET N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) 20 A per channel β€”
Total Power Dissipation (Ptot) 50 W β€”
On-State Resistance R_DS(on) 15.5 mOhm max at V_GS = 10 V β€”
Gate-Source Voltage (VGS) +/-20 V β€”
Operating Temperature Range -55 C to +175 C β€”
Package PG-TDSON-8-4 (Dual Super S08) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260 C peak reflow) β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101
Avalanche Tested 100% avalanche tested β€”
RoHS Status RoHS compliant (Green Product) Compliant
Configuration Dual N-channel array β€”
Channel Type N-Channel (Normal Level) β€”
Gate Threshold V_GS(th) [DATA_NEEDED: V_GS(th) typical value] β€”
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

Browse All Products Create BOM Request Quote