IPG20N06S415ATMA2 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPG20N06S415ATMA2 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S415ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | Dual N-channel enhancement-mode MOSFET | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| Total Power Dissipation (Ptot) | 50 W | — |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | PG-TDSON-8-4 (Dual Super S08) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS Status | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | — |
| Channel Type | N-Channel (Normal Level) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Pin Count | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |