IPG20N06S415ATMA2 vs IPD50N06S409ATMA2 比較
詳細な並列比較: IPG20N06S415ATMA2 メーカー: Infineon および IPD50N06S409ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPG20N06S415ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.49 |
| Technology | Dual N-channel enhancement-mode MOSFET | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| Total Power Dissipation (Ptot) | 50 W | — |
| On-State Resistance R_DS(on) | 15.5 mOhm max at V_GS = 10 V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| 動作温度範囲 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8-4 (Dual Super S08) | PG-TO252-3-11 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS ステータス | RoHS compliant (Green Product) | Compliant |
| Configuration | Dual N-channel array | — |
| Channel Type | N-Channel (Normal Level) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| ピン数 | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |