IPL60R060CFD7AUMA1 vs IPD60R145CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IPL60R060CFD7AUMA1 von Infineon und IPD60R145CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPL60R060CFD7AUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,03 | $1,05 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CFD7 | CoolMOS CFD7 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| Betriebstemperaturbereich | -40 °C to +150 °C | — |
| Gehäuse | PG-VSON-4-1 (Surface Mount) | TO-252AA (DPAK) surface mount |
| Montageart | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| MSL-Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Target Application | — | ZVS / LLC resonant converters, soft switching |