IPL60R060CFD7AUMA1 vs IPD60R145CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R060CFD7AUMA1 by Infineon and IPD60R145CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΞ© | Infineon
IPL60R060CFD7AUMA1 β ActiveInfineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R060CFD7AUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.03 | $1.05 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOSβ’ CFD7 | CoolMOS CFD7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V_DS) | 600 V | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Power Dissipation (P_D, Tc) | 219 W | β |
| R_DS(on) (max) at V_GS = 10 V | 60 mΞ© | β |
| R_DS(on) (typ, datasheet) | 48 mΞ© | β |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | β |
| Input Capacitance (C_iss) | 3193 pF | β |
| Output Capacitance (C_oss) | 62 pF | β |
| Gate-Source Voltage (V_GS) | Β±20 V (max) | β |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | β |
| Operating Temperature Range | -40 Β°C to +150 Β°C | β |
| Package | PG-VSON-4-1 (Surface Mount) | TO-252AA (DPAK) surface mount |
| Mounting Type | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Technology | β | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | β | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | β | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | β | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | β | Integrated fast body diode (low Q<sub>rr</sub>) |
| Operating Temperature | β | -55C to +150C (junction) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Target Application | β | ZVS / LLC resonant converters, soft switching |