IPL60R125P7AUMA1 vs IPB60R280P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPL60R125P7AUMA1 von Infineon und IPB60R280P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPL60R125P7AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,95 | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS P7 (600 V) |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25C) | 27 A | — |
| On-State Resistance RDS(on) max | 125 mOhm | — |
| Gate Charge (Qg, typ) | 36 nC | — |
| Total Gate Charge Qg (typ) | 36 nC | — |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | — |
| Gehäuse | ThinPAK 8x8 (4-pin + exposed pad) | PG-TO263-3 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL 2 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Betriebstemperaturbereich | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |