IPL60R125P7AUMA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R125P7AUMA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R125P7AUMA1
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΞ© 27A | Infineon
IPL60R125P7AUMA1 β Active
Specification Comparison
| Parameter | IPL60R125P7AUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS P7 (600 V) |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25C) | 27 A | β |
| On-State Resistance RDS(on) max | 125 mOhm | β |
| Gate Charge (Qg, typ) | 36 nC | β |
| Total Gate Charge Qg (typ) | 36 nC | β |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | β |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | β |
| Gate-Source Voltage (VGS) | +/-20 V (max) | β |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | ThinPAK 8x8 (4-pin + exposed pad) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | MSL 2 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, T_C=25Β°C) | β | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | β | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | β | 3.5 V |
| Power Dissipation P_D (T_C=25Β°C) | β | 53 W |
| Pin Count | β | 3 (2 + Tab) |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (T_j max) |
| Configuration | β | Single N-Channel |
| Lead-Free | β | Yes |
| Generation | β | 7th Gen CoolMOS (successor to P6) |